MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz
Features
1, Unmatched Input and Output Allowing Wide Frequency Range Utilization
2, Device can be used Single--Ended or in a Push--Pull Configuration
3, Qualified Up to a Maximum of 50 VDD Operation
4, Characterized from 30 V to 50 V for Extended Power Range
5, Suitable for Linear Application with Appropriate Biasing
6, Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation
7, Characterized with Series Equivalent Large--Signal Impedance Parameters
8, RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12.
| Transistor Type |
LDMOS (Dual) |
|
| Frequency |
230MHz |
|
| Gain |
25dB |
|
| Voltage - Test |
50V |
|
| Current Rating |
- |
|
| Noise Figure |
- |
|
| Current - Test |
100mA |
|
| Power - Output |
600W |
|
| Voltage - Rated |
130V |
|
| Package / Case |
NI-1230 |
|
| Supplier Device Package |
NI-1230 |
|
| Base Part Number |
MRFE6VP5600
|
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Product Tags:
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100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5 Images
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